Dmos transistor — Free Electronics Illustration | GPAI

Electronics

Dmos transistor

A vertical double-diffused MOS (DMOS) transistor shown in cross section. The device has a lightly doped n-type substrate forming the bulk and a heavily doped n+ drain contact region at the bottom. Near the top surface, a p-type body is diffused into the substrate, and an n+ source region is diffused within the p-body close to the surface. A thin gate oxide lies above the channel region, topped by a gate electrode. The geometry should clearly suggest the characteristic DMOS current path: a short lateral channel formed under the gate from the source through the p-body, then a vertical conduction path downward through the n-type substrate to the drain at the bottom.

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