Progress bar — Free Electronics Illustration | GPAI | GPAI

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Progress bar — Free Electronics Illustration | GPAI | GPAI

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Progress bar

Progress bar

Electronics

Progress bar

A single doped semiconductor drain diffusion region for a MOSFET cross-section, shown within a light gray silicon substrate as a compact implanted area near the surface on the side opposite the gate and opposite end of the channel. Depict it as a rectangular or slightly rounded lithographic region with smooth to sharp edges. Include a larger contact landing extension beyond the channel edge to suggest the contacted drain area. Styled as a reusable block matching the source diffusion region but clearly representing the drain.

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